ROHM brings TO-247-class cooling to surface-mount SiC MOSFET package

ROHM Semiconductor has launched the TSC3PAK, a new package for SiC MOSFETs that delivers heat dissipation performance comparable to conventional TO-247-4L through-hole packages while being fully compatible with automated surface-mount assembly. Mass production started this month. Through-hole SiC packages like the TO-247 dissipate heat well but require manual mounting, can’t Read more

By jackkellerinc, ago

JEDEC releases two SiC reliability guidelines for power conversion

JEDEC’s JC-70.2 Silicon Carbide Subcommittee has published two new free guidelines—JEP203 and JEP204—standardizing how engineers evaluate and qualify SiC power devices in EV inverters, industrial drives and energy infrastructure. JEP203, Guideline for Short Circuit Evaluation in Power Conversion Transistors, addresses short-circuit capability testing for power MOSFETs. Short-circuit behavior is a Read more

By jackkellerinc, ago
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