ROHM brings TO-247-class cooling to surface-mount SiC MOSFET package

ROHM Semiconductor has launched the TSC3PAK, a new package for SiC MOSFETs that delivers heat dissipation performance comparable to conventional TO-247-4L through-hole packages while being fully compatible with automated surface-mount assembly. Mass production started this month.

Through-hole SiC packages like the TO-247 dissipate heat well but require manual mounting, can’t support pick-and-place automation, and have a taller profile that limits board density. Surface-mount alternatives have existed but typically traded away heat dissipation to get there. ROHM’s TSC3PAK (14.00 × 18.58 × 3.50 mm) uses a top-side heat dissipation structure—the heat spreader faces up rather than down toward the PCB—to achieve comparable thermal performance to TO-247 in a surface-mount footprint.

The package incorporates ROHM’s proprietary groove structure to achieve a 6.66 mm creepage distance, supporting AC peak voltages up to 1,200 V in a Pollution Degree 2 environment. That voltage rating matters for OBC and electric compressor applications, where the 800 V battery systems increasingly common in EVs push voltage requirements well past what conventional 650 V or 900 V packages can safely handle. The devices inside use ROHM’s 4th Generation SiC MOSFETs, which the company says deliver low on-resistance and high-speed switching to reduce switching losses in power conversion stages.

Automotive applications include onboard chargers and electric compressors. Industrial applications include PV inverters and server power supplies.

Source: ROHM Semiconductor